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Figure 5.34 shows that as the VGS increased from VT to 8 V, the resulting saturation level for ID also increased from 0 to 10 mA.
The spacing between the levels of VGS increased as the magnitude of VGS increased, resulting in ever-increasing increments in drain current.
The squared term results in the nonlinear (curved) relationship between ID and VGS.
The k term is a constant that is a function of the construction of the device.
The value of k can be determined from the following equation
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